Works cited

Every number on this site traces to one of these references. Verified: DOI confirmed against the publisher record. Canonical: the standard reference for that property.

Electronic and material properties

Isberg, J., et al. (2002). High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond. Science, 297, 1670–1672. doi:10.1126/science.1074374 Electron mobility 4,500, hole mobility 3,800 cm²/V·s. verified

Wei, L., et al. (1993). Thermal conductivity of isotopically modified single crystal diamond. Phys. Rev. Lett., 70, 3764–3767. doi:10.1103/PhysRevLett.70.3764 Record conductivity in isotopically pure ¹²C diamond. verified

Olson, J. R., et al. (1993). Thermal conductivity of diamond between 170 and 1200 K and the isotope effect. Phys. Rev. B, 47, 14850–14856. doi:10.1103/PhysRevB.47.14850 Room-temperature conductivity near 2,200 W/m·K. canonical

Wort, C. J. H., & Balmer, R. S. (2008). Diamond as an electronic material. Materials Today, 11, 22–28. doi:10.1016/S1369-7021(07)70349-8 Bandgap 5.47 eV, breakdown field, device review. canonical

Tsao, J. Y., et al. (2018). Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. Adv. Electron. Mater., 4, 1600501. doi:10.1002/aelm.201600501 Cross-material comparison: SiC, GaN, Ga₂O₃, diamond. canonical

Field, J. E. (Ed.) (1992). The Properties of Natural and Synthetic Diamond. Academic Press. Hardness, Young's modulus, Debye temperature, sound velocity. canonical, book

Power-electronics figures of merit

Johnson, E. O. (1965). Physical limitations on frequency and power parameters of transistors. RCA Review, 26, 163–177. Johnson figure of merit. canonical, no DOI

Baliga, B. J. (1982). Semiconductors for high-voltage, vertical-channel field-effect transistors. J. Appl. Phys., 53, 1759–1764. doi:10.1063/1.331646 Baliga figure of merit. canonical

Keyes, R. W. (1972). Figure of merit for semiconductors for high-speed switches. Proc. IEEE, 60, 225–226. doi:10.1109/PROC.1972.8593 Keyes figure of merit. canonical

Baliga, B. J. (1989). Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Lett., 10, 455–457. doi:10.1109/55.43098 Baliga high-frequency figure of merit. canonical

NV-center quantum applications

Meija, J., et al. (2016). Isotopic compositions of the elements 2013 (IUPAC Technical Report). Pure Appl. Chem., 88, 293–306. doi:10.1515/pac-2015-0503 Isotopic abundances behind the spin-zero lattice comparison: ¹²C 98.9%, spin-zero Si 95.3%. canonical

Balasubramanian, G., et al. (2009). Ultralong spin coherence time in isotopically engineered diamond. Nature Materials, 8, 383–387. doi:10.1038/nmat2420 Spin coherence to 1.8 ms; nanotesla-scale sensitivity. verified

Doherty, M. W., et al. (2013). The nitrogen-vacancy colour centre in diamond. Physics Reports, 528, 1–45. doi:10.1016/j.physrep.2013.02.001 NV structure, 637 nm zero-phonon line, room-temperature readout. canonical

Degen, C. L., Reinhard, F., & Cappellaro, P. (2017). Quantum sensing. Rev. Mod. Phys., 89, 035002. doi:10.1103/RevModPhys.89.035002 Sensitivity limits and magnetometry theory. canonical

Maze, J. R., et al. (2008). Nanoscale magnetic sensing with an individual electronic spin in diamond. Nature, 455, 644–647. doi:10.1038/nature07279 Nanoscale magnetometry with a single NV spin. canonical

Intrinsic single-crystal, room-temperature values. Real-world diamond device performance is currently limited by doping and wafer-scale manufacturing, not by these intrinsic material limits. Questions or data-room access: founders@karalabs.ai